microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2001 rev. 1.0 www. microsemi . com MXP4005 ? 12.7 gbps ingaas/inp pin photo diode o pto -e lectronic p roducts p roduction d ata s heet description microsemi?s ingaas/inp pin photo diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. the device series offers superior noise performance and sensitivity due to their planar construction and passivation. the mxp400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations. this device is ideal for manu- facturers of optical receivers, transponders, optical transmission modules and combination pin photo diode ? transimpedance amplifier. microsemi will assemble die on submounts and custom confi- gurations. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features high responsivity low dark current extremely low capacitance 12ghz , high bandwidth custom sub-mounts large 40um bond pad applications 1310nm catv optical applications 1550nm dwdm optical applications sonet/sdh (fec), atm 10gigabit ethernet, fibre channel 10gbps nrz or rz modulation optical test equipment benefits planar passivation low contact resistance product highlight m m x x p p 4 4 0 0 0 0 5 5 typical spectral responsivity 0.0 0.2 0.4 0.6 0.8 1.0 1.2 800 900 1000 1100 1200 1300 1400 1500 1600 1700 wavelength (nm) responsivity (amps / watt) mxp4 micros 508um 508um ? 40um bond a ctive area 20um 508um 150 20um 25um 25um 25um 45 anod
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2001 rev. 1.0 www. microsemi . com MXP4005 ? 12.7 gbps ingaas/inp pin photo diode o pto -e lectronic p roducts p roduction d ata s heet characteristics test conditions (unle ss otherwise noted): t a = 25 o c, v r = 5 volts mxp4003 parameter symbol test conditions min typ max units ` maximum ratings operating junction temperature range t j -20 +85 o c storage temperature range t stg -55 +125 o c maximum soldering temperature 10 seconds maximum at temperature +260 o c ` electrical characteristics active area diameter 40 m responsivity (1) r v r = 5v, = 1550nm vr = 5v, = 1310nm 0.95 0.80 1.0 0.86 a/w linearity (2) l vr = 5v @10mw input power 5 % dark current i d v r = 5v 1.0 na breakdown voltage bv r i r = 10a 20 volts capacitance c v r = 5v 0.22 pf bandwidth bw v r = 5v, = 1550nm @3db 10 ghz note: 1. antireflective coating is ? wavelength at 1430nm covering 1310 and 1550nm applications 2. maximum distortion from nominal @ 10mw input power precautions for use esd protection is important. standard esd protection procedures should be employed whenever handling ingaas pin photo diode. e e l l e e c c t t r r i i c c a a l l s s
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